Hsin-Yi Lee

This inventor holds 109 USPTO granted patents and 48 published patent applications, primarily in Semiconductor Devices (CPC class H01L21-28088). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., Ralink Technology Corporation. Active years: 2006-2026.

USPTO Granted Patents = 109 (Patent Applications = 48)

% Patents Active = 95.4

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 93(Granted Patents)

Forward Citations (Not Self Cited) = 29(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Hsinchu County, TW (2013 - 2016)
Hsin Chu, TW (2006 - 2024)

Company Filing History:

101 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

5 out of 450

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

2 out of 112

Ralink Technology Corporation

patents

4. 1 out of 27

National Synchrotron Radiation Research Center

patents

Years Active: 2006-2026

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Areas of Expertise:

Gate Structures

Semiconductor Device

Transistor

Work Function Control

Nanosheet Transistor

Metal Gate Fill

Threshold Voltage

Selective Etching

Formation Method

Electroless Plating

Pre-deposition Treatment

Fluorine Incorporation

109 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12696513 - Work-function metal in transistors and method forming same (2026-07-28),

2. 12660292 - Semiconductor device and method of forming the same (2026-06-16),

3. 12610578 - Work function control in gate structures (2026-04-21),

4. 12593498 - Semiconductor device and forming method thereof (2026-03-31),

5. 12575343 - Gate structures in transistor devices and methods of forming same (2026-03-10),

6. 12575154 - Methods for pre-deposition treatment of a work-function metal layer (2026-03-10),

7. 12550374 - Semiconductor device and formation method thereof (2026-02-10),

8. 12525455 - Gate structures in transistors and method of forming same (2026-01-13),

9. 12513961 - Selective etching to increase threshold voltage spread (2025-12-30),

10. 12513957 - Transistor gate structures and methods of forming the same (2025-12-30),

11. 12513956 - Semiconductor device and method of forming the same (2025-12-30),

12. 12507470 - Semiconductor device and method of fabricating the same (2025-12-23),

13. 12484249 - Gate structures in transistors and method of forming same (2025-11-25),

14. 12471342 - NFET with aluminum-free work-function layer and method forming same (2025-11-11),

15. 12464817 - Semiconductor device and method (2025-11-04),

Title: The Innovative Journey of Hsin-Yi Lee

Introduction: Hsin-Yi Lee, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with her groundbreaking inventions.

Latest Patents: Hsin-Yi Lee's most recent patents include a cutting-edge smart home device that revolutionizes household automation and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: Throughout her illustrious career, Hsin-Yi Lee has been recognized for her innovative spirit and dedication to creating solutions that improve people's lives. Her work has garnered several prestigious awards and accolades in the tech industry.

Collaborations: Hsin-Yi Lee has collaborated with leading tech companies and research institutions to further develop and implement her inventions. Her partnerships have led to the successful integration of her technologies into various products and services.

Conclusion: Hsin-Yi Lee's passion for innovation and her relentless pursuit of excellence have solidified her reputation as a trailblazing inventor in the technology sector. Her remarkable contributions continue to inspire future generations of inventors worldwide.