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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsin-Yi Lee

USPTO Granted Patents = 97 

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 75(Granted Patents)

Forward Citations (Not Self Cited) = 29(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Hsinchu County, TW (2013 - 2016)
  • Hsin Chu, TW (2006 - 2024)

Company Filing History:

goldMedal94 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 112 
 
Ralink Technology Corporation
 patents
bronzeMedal1 out of 26 
 
National Synchrotron Radiation Research Center
 patents

Years Active: 2006-2025

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97 patents (USPTO):
1. 12484249 - Gate structures in transistors and method of forming same (2025-11-25),
2. 12471342 - NFET with aluminum-free work-function layer and method forming same (2025-11-11),
3. 12464817 - Semiconductor device and method (2025-11-04),
4. 12453153 - Work-function layers in the gates of pFETs (2025-10-21),
5. 12451359 - Fluorine incorporation method for nanosheet (2025-10-21),
6. 12439666 - Semiconductor device and methods of manufacture (2025-10-07),
7. 12439648 - Transistor gate structures and methods of forming thereof (2025-10-07),
8. 12426324 - Gates structures of nanostructure field-effect transistors (nano-FETs) including a plurality of semiconductor based capping materials and methods of forming the same (2025-09-23),
9. 12426321 - Transistor gate structures and methods of forming the same (2025-09-23),
10. 12417920 - Transistor gate structure and method of forming (2025-09-16),
11. 12414340 - Semiconductor structure including nanosheet channel structure and method for forming the same (2025-09-09),
12. 12402343 - Work function tuning in semiconductor devices (2025-08-26),
13. 12376340 - Nanosheet field-effect transistor device and method of forming (2025-07-29),
14. 12363974 - Gate structure of semiconductor device and method of forming same (2025-07-15),
15. 12349410 - Nanostructure field-effect transistor (NANO-FET) with gates including a seam in p-type work function metal between nanostructures and methods of forming (2025-07-01),

Title: The Innovative Journey of Hsin-Yi Lee

Introduction: Hsin-Yi Lee, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with her groundbreaking inventions.

Latest Patents: Hsin-Yi Lee's most recent patents include a cutting-edge smart home device that revolutionizes household automation and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: Throughout her illustrious career, Hsin-Yi Lee has been recognized for her innovative spirit and dedication to creating solutions that improve people's lives. Her work has garnered several prestigious awards and accolades in the tech industry.

Collaborations: Hsin-Yi Lee has collaborated with leading tech companies and research institutions to further develop and implement her inventions. Her partnerships have led to the successful integration of her technologies into various products and services.

Conclusion: Hsin-Yi Lee's passion for innovation and her relentless pursuit of excellence have solidified her reputation as a trailblazing inventor in the technology sector. Her remarkable contributions continue to inspire future generations of inventors worldwide.

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