The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jun. 06, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Da-Yuan Lee, Jhubei, TW;
Weng Chang, Hsinchu, TW;
Assignee:
Taiwan Semicondutor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10P 14/20 (2026.01); H10P 50/64 (2026.01); H10P 70/00 (2026.01);
U.S. Cl.
CPC ...
H10D 30/031 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10P 14/3462 (2026.01); H10P 50/642 (2026.01); H10P 70/20 (2026.01);
Abstract
Embodiments include a nanoFET device and method for forming the same, the nanoFET having channel regions which have been thinned during a gate replacement process to remove etching residue. In some embodiments, the channel regions become dog bone shaped. In some embodiments, the ends of the channel regions have vertical protrusions or horns resulting from a previous trimming process which is performed prior to depositing sidewall spacers.