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For the Inventor, By the Inventor

Changhua, Taiwan

Hsien-Ming Lee

USPTO Granted Patents = 61 

Average Co-Inventor Count = 5.0

ph-index = 5

Forward Citations = 110(Granted Patents)

Forward Citations (Not Self Cited) = 102(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Datsuen Shiang, TW (2020 - 2021)
  • Changhua, TW (2005 - 2024)

Company Filing History:

goldMedal61 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2005-2025

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Areas of Expertise:
Metal Gate Structure
Semiconductor Device
Transistor Manufacturing
FinFET Structures
Work-Function Tuning
Capping Layers
Threshold Voltage Tuning
In-Situ Etching Processes
High-Aspect Ratio Trenches
Low-Resistivity Conductive Layer
Void Elimination
Hybrid Capping Layer
61 patents (USPTO):Explore Patents
1. 12431356 - Metal gate structure and method of forming the same (2025-09-30),
2. 12376361 - Capping layers in metal gates of transistors (2025-07-29),
3. 12354876 - Gate structure passivating species drive-in method and structure formed thereby (2025-07-08),
4. 12294022 - Semiconductor device and method of manufacturing the same (2025-05-06),
5. 12255104 - Semiconductor device and method of manufacture (2025-03-18),
6. 12237228 - Semiconductor device and method (2025-02-25),
7. 12183629 - Selective hybrid capping layer for metal gates of transistors (2024-12-31),
8. 12176251 - Semiconductor device with profiled work-function metal gate electrode and method of making (2024-12-24),
9. 12170202 - Formation and in-situ etching processes for metal layers (2024-12-17),
10. 12142530 - Semiconductor device and method of manufacture (2024-11-12),
11. 12100751 - Void elimination for gap-filling in high-aspect ratio trenches (2024-09-24),
12. 12087767 - Method of tuning threshold voltages of transistors (2024-09-10),
13. 12040235 - Semiconductor device and method of manufacture (2024-07-16),
14. 11961768 - CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same (2024-04-16),
15. 11916146 - Gate resistance reduction through low-resistivity conductive layer (2024-02-27),

Title: The Innovative Journey of Hsien-Ming Lee

Introduction:

Hsien-Ming Lee, a pioneering inventor hailing from Changhua, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Lee's latest patents showcase his commitment to innovation, with a focus on advancements in renewable energy technologies and sustainable solutions for a greener future.

Career Highlights:

Throughout his illustrious career, Hsien-Ming Lee has been at the forefront of technological innovation, with a keen focus on developing cutting-edge solutions that have the potential to revolutionize industries.

Collaborations:

Lee has collaborated with leading research institutions, universities, and companies to further his inventions and bring them to market, showcasing his ability to work across disciplines and sectors to drive progress.

Conclusion:

In conclusion, Hsien-Ming Lee's dedication to innovation and his relentless pursuit of technological advancement have solidified his position as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors to push the boundaries of what is possible.

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