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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12376361 B1

PDFFull Text
Date of Patent:
Jul. 29, 2025

Filed:

Mar. 21, 2022

Capping layers in metal gates of transistors

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tsung-Ta Tang, Hsinchu, TW;

Yi-Ting Wang, Kaohsiung, TW;

Chung Ta Chen, Hsinchu, TW;

Hsien-Ming Lee, Changhua, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Shaun M Campbell

Int. Cl.
CPC ...
H10D 64/66 (2025.01); H01L 21/02 (2006.01); H01L 21/28 (2025.01); H01L 21/285 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H01L 21/265 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H10D 62/00 (2025.01); H10D 62/17 (2025.01); H10D 62/60 (2025.01);
U.S. Cl.
CPC ...
H10D 64/667 (2025.01); H01L 21/02164 (2013.01); H01L 21/0223 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 62/151 (2025.01); H10D 64/01 (2025.01); H10D 64/017 (2025.01); H01L 21/26513 (2013.01); H01L 21/31053 (2013.01); H01L 21/76224 (2013.01); H10D 62/021 (2025.01); H10D 62/393 (2025.01); H10D 62/60 (2025.01); H10D 64/021 (2025.01);
Abstract

A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.

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Tang, Tsung-Ta. (2025). Capping layers in metal gates of transistors (U.S. Patent No. 12376361). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12376361

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