The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Jun. 30, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shao-Jyun Wu, New Taipei, TW;
Hung-Chi Wu, Hsinchu, TW;
Chia-Ching Lee, New Taipei, TW;
Pin-Hsuan Yeh, Taipei, TW;
Hung-Chin Chung, Pingzhen, TW;
Hsien-Ming Lee, Changhua, TW;
Chien-Hao Chen, Chuangwei Township, TW;
Sheng-Liang Pan, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.