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Hung-Chin Chung

This inventor holds 32 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2026.

USPTO Granted Patents = 32 (Patent Applications = 7)

% Patents Active = 96.9

Average Co-Inventor Count = 6.6

ph-index = 2

Forward Citations = 23(Granted Patents)

Company Filing History:

32 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2017-2026

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Areas of Expertise:

Gate Resistance

Low-Resistivity Layer

Work Function Layer

Fin Field-Effect Transistor

Transistor Metal Gate

Doped Work-Function Layer

Threshold Voltage Tuning

Multi-Layer Composition

Pre-Decomposition Treatment

Semiconductor Manufacturing

Oxygen-Blocking Dopant

Hybrid Work Function Stack

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12733199 - Gate resistance reduction through low-resistivity conductive layer (2026-09-08),

2. 12300733 - Semiconductor device with a work function layer having an oxygen-blocking dopant layer (2025-05-13),

3. 12278288 - Fin field-effect transistor device having hybrid work function layer stack (2025-04-14),

4. 12255104 - Semiconductor device and method of manufacture (2025-03-18),

5. 12237228 - Semiconductor device and method (2025-02-25),

6. 12176251 - Semiconductor device with profiled work-function metal gate electrode and method of making (2024-12-24),

7. 12142531 - Pre-deposition treatment for FET technology and devices formed thereby (2024-11-12),

8. 12142530 - Semiconductor device and method of manufacture (2024-11-12),

9. 12087767 - Method of tuning threshold voltages of transistors (2024-09-10),

10. 12087637 - Semiconductor device and method of manufacture (2024-09-10),

11. 12051753 - Fin field-effect transistor device having hybrid work function layer stack (2024-07-30),

12. 12040235 - Semiconductor device and method of manufacture (2024-07-16),

13. 12021145 - Fin field-effect transistor device having hybrid work function layer stack (2024-06-25),

14. 11916146 - Gate resistance reduction through low-resistivity conductive layer (2024-02-27),

15. 11804409 - Semiconductor device with profiled work-function metal gate electrode and method of making (2023-10-31),

Title: The Innovative Journey of Inventor Hung-Chin Chung

Introduction: Hung-Chin Chung, a talented inventor hailing from Pingzhen, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Hung-Chin Chung's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Hung-Chin Chung has established himself as a leading figure in the renewable energy sector. His work has been instrumental in driving forward the adoption of sustainable energy solutions on a global scale.

Collaborations: Throughout his career, Hung-Chin Chung has collaborated with various research institutions, universities, and companies to further his research and bring his inventions to life. His collaborative efforts have led to the successful implementation of several cutting-edge technologies in the market.

Conclusion: Hung-Chin Chung's passion for innovation and dedication to creating a more sustainable future have solidified his position as a respected inventor in the field of renewable energy. His contributions continue to inspire the next generation of inventors to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.

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