The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Dec. 20, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuan-Chang Chiu, Hsinchu, TW;
Chia-Ching Lee, New Taipei, TW;
Chien-Hao Chen, Chuangwei Township, TW;
Hung-Chin Chung, Pingzhen, TW;
Hsien-Ming Lee, Changhua, TW;
Chi On Chui, Hsinchu, TW;
Hsuan-Yu Tung, Keelung, TW;
Chung-Chiang Wu, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A structure includes a semiconductor substrate including a first semiconductor region and a second semiconductor region, a first transistor in the first semiconductor region, and a second transistor in the second semiconductor region. The first transistor includes a first gate dielectric over the first semiconductor region, a first work function layer over and contacting the first gate dielectric, and a first conductive region over the first work function layer. The second transistor includes a second gate dielectric over the second semiconductor region, a second work function layer over and contacting the second gate dielectric, wherein the first work function layer and the second work function layer have different work functions, and a second conductive region over the second work function layer.