The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jun. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsung-Han Shen, Taoyuan, TW;
Kevin Chang, New Taipei, TW;
Yu-Ming Li, Hsinchu, TW;
Chih-Hsiang Fan, Hsinchu, TW;
Yi-Ting Wang, Kaohsiung, TW;
Wei-Chin Lee, Taipei, TW;
Hsien-Ming Lee, Changhua, TW;
Chien-Hao Chen, Llan County, TW;
Chi On Chui, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes forming a gate trench over a semiconductor substrate, depositing a gate dielectric layer and a work function layer in the gate trench, depositing a capping layer over the work function layer, passivating a surface portion of the capping layer to form a passivation layer, removing the passivation layer, depositing a fill layer in the gate trench, recessing the fill layer and the capping layer, and forming a contact metal layer above the capping layer in the gate trench.