Tsung-Han Shen

Title: Tsung-Han Shen: Innovator in Semiconductor Technology

Introduction

Tsung-Han Shen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of Tsung-Han Shen's latest patents is titled "Metal gate structure and method of forming the same." This patent describes a method of manufacturing a semiconductor device that includes forming a gate trench over a semiconductor substrate, depositing a gate dielectric layer and a work function layer, and creating a contact metal layer above the capping layer in the gate trench. Another notable patent is "Void elimination for gap-filling in high-aspect ratio trenches." This invention outlines a method that involves forming a dummy gate over a fin, surrounding it with dielectric material, and replacing the dummy gate with a replacement gate structure.

Career Highlights

Tsung-Han Shen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approaches have positioned him as a valuable asset in the field.

Collaborations

Throughout his career, Tsung-Han Shen has collaborated with notable colleagues, including Chih-Hsiang Fan and Wei-Chin Lee. These collaborations have further enhanced his contributions to semiconductor technology.

Conclusion

Tsung-Han Shen's work in semiconductor technology exemplifies innovation and dedication. His patents reflect a commitment to advancing the industry and improving manufacturing processes.