Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsung-Han Shen

Chi On Chui

Hsien-Ming Lee

Wei-Chin Lee

Chih-Hsiang Fan

Jia-Ming Lin

Chien-Hao Chen

Yi-Ting Wang

Kevin Chang

Yu-Ming Li

A method of manufacturing a semiconductor device includes forming a gate trench over a semiconductor substrate, depositing a gate dielectric layer and a work function layer in the gate trench, depositing a capping layer over the work function layer, passivating a surface portion of the capping layer to form a passivation layer, removing the passivation layer, depositing a fill layer in the gate trench, recessing the fill layer and the capping layer, and forming a contact metal layer above the capping layer in the gate trench.

Metal gate structure and method of forming the same

A method of forming a semiconductor device includes: forming a dummy gate over a fin, where the fin protrudes above a substrate; surrounding the dummy gate with a dielectric material; and replacing the dummy gate with a replacement gate structure, where replacing the dummy gate includes: forming a gate trench in the dielectric material, where forming the gate trench includes removing the dummy gate; forming a metal-gate stack in the gate trench, where forming the metal-gate stack includes forming a gate dielectric layer, a first work function layer, and a gap-filling material sequentially in the gate trench; and enlarging a volume of the gap-filling material in the gate trench.

Void elimination for gap-filling in high-aspect ratio trenches

Growing community of inventors

Hsinchu, Taiwan

Tsung-Han Shen