The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Apr. 22, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsin-Han Tsai, Hsinchu, TW;
Hsiang-Ju Liao, Hsinchu, TW;
Yi-Lun Li, Hsinchu, TW;
Cheng-Lung Hung, Hsinchu, TW;
Weng Chang, Hsin-Chu, TW;
Chi On Chui, Hsinchu, TW;
Jo-Chun Hung, Hsinchu, TW;
Chih-Wei Lee, New Taipei, TW;
Chia-Wei Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Ruthenium of a metal gate (MG) and/or a middle end of line (MEOL) structure is annealed to reduce, or even eliminate, seams after the ruthenium is deposited. Because the annealing reduces (or removes) seams in deposited ruthenium, electrical performance is increased because resistivity of the MG and/or the MEOL structure is decreased. Additionally, for MGs, the annealing generates a more even deposition profile, which results in a timed etching process producing a uniform gate height. As a result, more of the MGs will be functional after etching, which increases yield during production of the electronic device.