Yi-Lun Li

Title: Yi-Lun Li: Innovator in Semiconductor Device Technology

Introduction

Yi-Lun Li is an inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor devices. His innovative approaches aim to enhance the performance and efficiency of these devices.

Latest Patent Applications

Yi-Lun Li has filed a patent application titled "METHODS OF WIDENING THRESHOLD VOLTAGE TUNING RANGE FOR SEMICONDUCTOR DEVICES." This application describes methods and devices that include forming a dielectric layer over a portion of a substrate. It also involves creating a first p-type work function layer made of titanium nitride over the dielectric layer. Furthermore, a second p-type work function layer, also comprising titanium nitride with dopants, is formed over the first layer. An aluminum-containing N-type work function layer is then created over the second p-type work function layer. The dopants in the second layer help reduce aluminum diffusion from the aluminum-containing N-type work function layer into the second p-type work function layer. Finally, a metal layer is formed over the aluminum-containing N-type work function layer.

Conclusion

Yi-Lun Li's work in semiconductor device technology showcases his innovative spirit and dedication to advancing the field. His patent application reflects his commitment to improving device performance and efficiency.