The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Jun. 17, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Li-Lin Su, Dongshih, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Huang-Ming Chen, Hsinchu, TW;

Hsueh Wen Tsau, Zhunan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 29/49 (2006.01); H01L 23/532 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/28035 (2013.01); H01L 21/28088 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76847 (2013.01); H01L 21/76879 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 29/49 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 23/53223 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.


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