The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jun. 22, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Chiang Wu, Taichung, TW;
Wei-Chin Lee, Taipei, TW;
Shih-Hang Chiu, Taichung, TW;
Chia-Ching Lee, New Taipei, TW;
Hsueh Wen Tsau, Zhunan Township, TW;
Cheng-Yen Tsai, New Taipei, TW;
Cheng-Lung Hung, Hsinchu, TW;
Da-Yuan Lee, Jhubei, TW;
Ching-Hwanq Su, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.