The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Dec. 17, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Mrunal A Khaderbad, Hsinchu, TW;
Ziwei Fang, Hsinchu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Hsueh Wen Tsau, Miaoli County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An Integrated Circuit (IC) device includes a first plurality of semiconductor layers over a substrate, a first gate dielectric layer and a first gate electrode. The first gate electrode includes a first fill metal layer and a work function metal layer disposed between the first gate dielectric layer and the first fill metal layer. The IC device further includes a second plurality of semiconductor layers over the substrate, a second gate dielectric layer and a second gate electrode. The second gate electrode includes a second fill metal layer directly contacting the second gate dielectric layer. A top surface of the second fill metal layer extends above a topmost layer of the second plurality of semiconductor layers. The material of the semiconductor layers has a midgap. The work function metal layer has a work function lower than the midgap. The fill metal layer has a work function higher than the midgap.