The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Mar. 14, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shen-Yang Lee, Miaoli County, TW;
Hsiang-Pi Chang, New Taipei City, TW;
Huang-Lin Chao, Hillsboro, OR (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming nanostructured channel regions on a fin or sheet base, forming gate openings surrounding the nanostructured channel regions, forming oxide layers on exposed surfaces of the nanostructured channel regions and the fin or sheet base in the gate openings, performing a first doping process on the oxide layers to form doped oxide layers, depositing a first dielectric layer on the doped oxide layers, performing a second doping process on the first dielectric layer to form a doped dielectric layer, and depositing a conductive layer on the doped dielectric layer.