The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Mar. 10, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Sung-Li Wang, Zhubei, TW;
Hsu-Kai Chang, Hsinchu, TW;
Jhih-Rong Huang, Hsinchu, TW;
Yen-Tien Tung, Hsinchu, TW;
Chia-Hung Chu, Taipei, TW;
Tzer-Min Shen, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a gate structure disposed on the fin structure, a source/drain (S/D) region disposed adjacent to the gate structure, a contact structure disposed on the S/D region, and a dipole layer disposed at an interface between the ternary compound layer and the S/D region. The contact structure includes a ternary compound layer disposed on the S/D region, a work function metal (WFM) silicide layer disposed on the ternary compound layer, and a contact plug disposed on the WFM silicide layer.