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For the Inventor, By the Inventor

Hsinchu, Taiwan

Liang-Yin Chen

This inventor holds 122 USPTO granted patents and 65 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66795). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Liang-Yin Chen. Retrieved from https://idiyas.com/inventor/liang-yin-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 122 

% Patents Active = 98.4

Average Co-Inventor Count = 5.5

ph-index = 6

Forward Citations = 407(Granted Patents)

Forward Citations (Not Self Cited) = 322(Dec 10, 2025)


Inventors with similar research interests:

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Company Filing History:

goldMedal118 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal4 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Wafer Positioning
Gate-All-Around
Field-Effect Transistor
Epitaxial Structures
Shallow Trench Isolation
Doping Techniques
Multiple Implantation
Contact Plugs
Power Rails
Patterning Methods
Semiconductor Processing
Conductive Features
122 patents (USPTO):Explore Patents
1. 12751078 - Doped well for semiconductor devices (2026-09-29),
2. 12701760 - Semiconductor device and manufacturing method thereof (2026-08-04),
3. 12666690 - Semiconductor device and manufacturing method thereof (2026-06-23),
4. 12622245 - Ion implant process for defect elimination in metal layer planarization (2026-05-05),
5. 12557623 - Semiconductor device with connecting structure having a doped layer and method for forming the same (2026-02-17),
6. 12557602 - Wafer positioning method and apparatus (2026-02-17),
7. 12557314 - Gate-all-around field-effect transistor device (2026-02-17),
8. 12538567 - Semiconductor structure (2026-01-27),
9. 12527070 - Method for forming wells for semiconductor devices using implanations of increasing energy (2026-01-13),
10. 12513948 - Forming epitaxial structures in fin field effect transistors (2025-12-30),
11. 12501647 - Semiconductor device and method of manufacture (2025-12-16),
12. 12482654 - System and method for multiple step directional patterning (2025-11-25),
13. 12477764 - Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes (2025-11-18),
14. 12432977 - Semiconductor device and method for manufacturing the same (2025-09-30),
15. 12432963 - Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer (2025-09-30),

Title: The Innovative Journey of Inventor Liang-Yin Chen

Introduction:

Liang-Yin Chen, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation through his groundbreaking inventions.

Latest Patents:

Liang-Yin Chen's latest patents include cutting-edge technologies in the fields of semiconductor devices, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach.

Career Highlights:

With a career spanning over two decades, Liang-Yin Chen has worked with leading tech companies and research institutions, honing his skills and expertise in developing innovative solutions to complex challenges. His work has been recognized globally for its impact and ingenuity.

Collaborations:

Throughout his career, Liang-Yin Chen has collaborated with top researchers, engineers, and industry experts, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the development of groundbreaking technologies that have revolutionized various industries.

Conclusion:

Inventor Liang-Yin Chen's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary in the world of inventions. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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