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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12557623 B1

PDFFull Text
Date of Patent:
Feb. 17, 2026

Filed:

Jul. 26, 2023

Semiconductor device with connecting structure having a doped layer and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuo-Ju Chen, Taichung, TW;

Chun-Hsien Huang, Hsinchu, TW;

Su-Hao Liu, Jhongpu Township, TW;

Liang-Yin Chen, Hsinchu, TW;

Huicheng Chang, Tainan, TW;

Yee-Chia Yeo, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Daniel Luke

Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76825 (2013.01); H01L 21/76816 (2013.01); H01L 21/76883 (2013.01); H01L 21/76886 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53242 (2013.01); H01L 23/53295 (2013.01);
Abstract

A connecting structure includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants.

Find Patent Forward Citations

Chen, Kuo-Ju. (2026). Semiconductor device with connecting structure having a doped layer and method for forming the same (U.S. Patent No. 12557623). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12557623

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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