Tainan, Taiwan

Chun-Hsien Huang

This inventor holds 95 USPTO granted patents and 34 published patent applications and 2 EPO patents, primarily in Semiconductor Devices (CPC class H01L23-5226). Top assignees: United Microelectronics Corp., Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chun-Hsien Huang. Retrieved from https://idiyas.com/inventor/chun-hsien-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 95 

% Patents Active = 98.9

 

Average Co-Inventor Count = 5.4

ph-index = 7

Forward Citations = 178(Granted Patents)

Forward Citations (Not Self Cited) = 146(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Jiali Township, Tainan County, TW (2012)
  • Tainan County, TW (2012 - 2013)
  • Tainan, TW (2013 - 2024)
  • Hsin-Chu, TW (2016 - 2024)

Company Filing History:


Years Active: 2012-2026

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Areas of Expertise:
Semiconductor Devices
Memory Layouts
Contact Formation
Manufacturing Methods
Magnetoresistive RAM
Static RAM
Interconnect Structures
Conductive Features
Phase Control
Capping Layers
Ternary CAM
Doped Layers
95 patents (USPTO):Explore Patents

Title: **Chun-Hsien Huang: Innovator in Static Random Access Memory Design**

Introduction

Chun-Hsien Huang, a prominent inventor based in Tainan, Taiwan, has made significant contributions to the field of static random access memory (SRAM) design. With 51 patents to his name, he stands out as an influential figure in the semiconductor industry, recognized for his innovative approaches to memory architecture.

Latest Patents

Among his latest patents, Huang has developed groundbreaking technologies related to the layout of static random access memory. One patent details a layout pattern that incorporates multiple gate structures on a substrate, designed to create a series of transistors that form an efficient latch circuit. This design consists of two pull-up transistors (PU) and two pull-down transistors (PD) integrated alongside access transistors (PG) for optimal performance. Notably, the patent specifies that the fin structure of the pull-down transistor is wider than that of the access transistor, enhancing the functionality of memory cells. Another patent expands on the layout pattern by including a variety of transistors working in parallel to improve SRAM efficiency.

Career Highlights

Chun-Hsien Huang has built a notable career, particularly through his work at renowned companies such as United Microelectronics Corporation and Promd Biotech Co., Ltd. His tenure at these institutions allowed him to refine his expertise in memory design, positioning him as a leading inventor in the field. His continuous innovation is reflected in his impressive patent portfolio, showcasing a commitment to advancing semiconductor technology.

Collaborations

Throughout his career, Huang has collaborated with several talented individuals, including coworkers Yu-Tse Kuo and Shu-Ru Wang. Their combined expertise and innovative spirit have contributed to numerous developments in SRAM design and related technologies, fostering a collaborative atmosphere that pushes the boundaries of engineering in the semiconductor space.

Conclusion

Chun-Hsien Huang's contributions to static random access memory illustrate his pivotal role in advancing semiconductor technology. With 51 patents to his credit, his work continues to influence the design and efficiency of memory systems. As an inventor, he exemplifies the spirit of innovation, ensuring that developments in the semiconductor industry remain at the forefront of technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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