The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jun. 01, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Hsiang Chao, Taipei, TW;
Shu-Lan Chang, Hsinchu, TW;
Ching-Yi Chen, Hsinchu, TW;
Shih-Wei Yeh, Hsinchu, TW;
Pei Shan Chang, Taipei, TW;
Ya-Yi Cheng, Taichung, TW;
Yu-Chen Ko, Chiayi, TW;
Yu-Shiuan Wang, Taipei, TW;
Chun-Hsien Huang, Hsinchu, TW;
Hung-Chang Hsu, Kaohsiung, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Wei-Jung Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Provided is a conductive structure and a method for forming such a structure. The method includes forming a treatable layer by depositing a layer comprising a metal over a structure; performing a directional treatment process on a targeted portion of the treatable layer to convert the targeted portion to a material different from a non-targeted portion of the treatable layer, wherein the directional treatment process is selected from the group consisting of nitridation, oxidation, chlorination, carbonization; and selectively removing the non-targeted portion from the structure, wherein the targeted portion remains over the structure.