The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
May. 13, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Pei Shan Chang, Taipei, TW;
Yi-Hsiang Chao, New Taipei, TW;
Chun-Hsien Huang, Hsinchu, TW;
Peng-Hao Hsu, Hsinchu, TW;
Kevin Lee, Hsinchu, TW;
Shu-Lan Chang, Hsinchu, TW;
Ya-Yi Cheng, Taichung, TW;
Ching-Yi Chen, Hsinchu, TW;
Wei-Jung Lin, Hsinchu, TW;
Chih-Wei Chang, Hsinchu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.