Peng-Hao Hsu

Title: **Peng-Hao Hsu: Innovator in Semiconductor Technology**

Introduction

Peng-Hao Hsu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a unique patent that showcases his innovative approach to device design and fabrication.

Latest Patents

Hsu's most recent patent is titled "Contact features of semiconductor device and method of forming same." This innovative method entails the formation of a dielectric layer over an epitaxial source/drain region, followed by the creation of an opening that exposes a portion of this region. A barrier layer is then formed on the sidewalls and bottom of the opening, which undergoes an oxidation process. This process transforms part of the barrier layer into an oxidized barrier layer while also converting adjacent portions of the dielectric layer into a liner layer. After the oxidized barrier layer is removed, the opening is filled with a conductive material in a bottom-up manner, ensuring physical contact between the conductive material and the liner layer.

Career Highlights

Peng-Hao Hsu is affiliated with Taiwan Semiconductor Manufacturing Company Limited, one of the leading firms in semiconductor manufacturing worldwide. His role at TSMC underscores his expertise and commitment to pushing the boundaries of semiconductor technology through research and innovation.

Collaborations

Throughout his career, Hsu has collaborated with esteemed professionals in the industry, including his coworkers Pin-Wen Chen and Chang-Ting Chung. Their joint efforts demonstrate the power of teamwork in advancing technological innovations and lead to breakthroughs in semiconductor device fabrication.

Conclusion

Peng-Hao Hsu's contributions to semiconductor technology are significant and innovative. His patent reflects his ability to enhance device performance and manufacturing processes. As he continues to work at Taiwan Semiconductor Manufacturing Company, Hsu is expected to be at the forefront of future advancements in the semiconductor industry.