The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Oct. 28, 2024
United Microelectronics Corp., Hsin-Chu City, TW;
Chun-Cheng Lin, Kaohsiung City, TW;
Chun-Hsien Huang, Tainan City, TW;
Jun-Jie Wang, Changhua County, TW;
Yu-Tse Kuo, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
The invention provides a static random access memory, which includes at least a first pull-up transistor (PU), a first pull-down transistor (PD), a second pull-up transistor (PU), a second pull-down transistor (PD), a first access transistor (PG), a second access transistor (PG), a first read port transistor (RPD) and a second read port transistor (RPD). Wherein the gate structures of the first pull-down transistor (PD) and the second access transistor (PG) each include a P type work function metal layer, and an N type work function metal layer is located on the P type work function metal layer in the gates of the first pull-down transistor (PD) and the second access transistor (PG).