Company Filing History:
Years Active: 2015-2019
Title: Innovations of Jun-Jie Wang in SRAM Technology
Introduction
Jun-Jie Wang is a prominent inventor based in Changhua County, Taiwan. He has made significant contributions to the field of static random access memory (SRAM) technology. With a total of 7 patents to his name, Wang's work has advanced the efficiency and functionality of memory systems.
Latest Patents
Wang's latest patents include innovative designs for layout patterns in SRAM. One of his notable inventions is a layout pattern that features a first inverter and a second inverter, which together form a latch circuit. This latch circuit is composed of four transistors, including a first access transistor and a second access transistor, which are electrically connected to the latch circuit. The design specifies that the first access transistor is linked to a first word line and a first bit line, while the second access transistor connects to a second word line and a second bit line. Notably, the first access transistor has a first gate length, and the second access transistor has a second gate length, with the two lengths differing from each other. Additionally, the layout includes two read transistors that are connected in series, with one of them linked to the latch circuit.
Career Highlights
Wang is currently employed at United Microelectronics Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in enhancing the performance of SRAM, making it more efficient for various applications.
Collaborations
Wang has collaborated with several talented individuals in his field, including Po-Chao Tsao and Chia-Jui Liang. These collaborations have contributed to the successful development of his patented technologies.
Conclusion
Jun-Jie Wang's contributions to SRAM technology through his innovative patents have significantly impacted the industry. His work at United Microelectronics Corporation and collaborations with fellow inventors highlight his commitment to advancing memory technology.
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