The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jun. 27, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chun-Yen Tseng, Tainan, TW;
Shu-Ru Wang, Taichung, TW;
Yu-Tse Kuo, Tainan, TW;
Chang-Hung Chen, Tainan, TW;
Yi-Ting Wu, Tainan, TW;
Shu-Wei Yeh, Tainan, TW;
Ya-Lan Chiou, Tainan, TW;
Chun-Hsien Huang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10N 50/80 (2023.02);
Abstract
A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.