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For the Inventor, By the Inventor

Tainan, Taiwan

Chang-Hung Chen

USPTO Granted Patents = 13

Average Co-Inventor Count = 5.2

ph-index = 2

Forward Citations = 23(Granted Patents)


Company Filing History:

goldMedal13 out of 7,085 
 
United Microelectronics Corp.
 patents

Years Active: 2016-2025

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13 patents (USPTO):Explore Patents
1. 12389583 - Layout pattern for static random access memory (2025-08-12),
2. 12349369 - Layout pattern of magnetoresistive random access memory (2025-07-01),
3. 12063791 - Layout pattern of magnetoresistive random access memory (2024-08-13),
4. 11943935 - Layout pattern of magnetoresistive random access memory (2024-03-26),
5. 11502088 - Layout pattern of static random access memory and the manufacturing method thereof (2022-11-15),
6. 11489010 - Layout pattern of magnetoresistive random access memory (2022-11-01),
7. 10978122 - Memory including non-volatile cells and current driving circuit (2021-04-13),
8. 10607981 - Layout pattern for static random access memory (2020-03-31),
9. 10522551 - Semiconductor device and semiconductor apparatus (2019-12-31),
10. 10504788 - Method of adjusting signal to noise ratio of SRAM and invertor structure (2019-12-10),
11. 10276446 - Method of adjusting signal to noise ratio of SRAM and invertor structure (2019-04-30),
12. 9761302 - Static random access memory cell and manufacturing method thereof (2017-09-12),
13. 9401366 - Layout pattern for 8T-SRAM and the manufacturing method thereof (2016-07-26),

Title: Innovator Chang-Hung Chen: Advancements in Memory Technology

Introduction

Chang-Hung Chen is a prolific inventor based in Tainan, Taiwan, with a remarkable portfolio of 12 patents. His innovative contributions primarily focus on the field of memory technology, which has significant implications for modern computing.

Latest Patents

Among his latest patents, Chang-Hung Chen has developed a layout pattern for magnetoresistive random access memory (MRAM). This unique layout pattern employs a substrate containing both a first and a second cell region, along with a diffusion region that extends through these regions. The design features a first H-shape and a second H-shape, enhancing the efficiency and effectiveness of MRAM technology.

Career Highlights

Chang-Hung Chen is currently associated with United Microelectronics Corporation, a leading semiconductor foundry known for its cutting-edge technology and innovations. His work has significantly impacted the advancement of memory technologies, positioning him as a key player in the industry.

Collaborations

Throughout his career, Chang-Hung Chen has had the opportunity to collaborate with notable coworkers, including Chun-Hsien Huang and Yu-Tse Kuo. These collaborations have further enriched his understanding and contributions to memory technology, demonstrating the importance of teamwork in driving technological advancements.

Conclusion

Chang-Hung Chen's innovative spirit and technical expertise continue to pave the way for advancements in memory technology. With a strong foundation of patents and collaborations under his belt, he remains an influential figure in the field, shaping the future of computing through his inventive efforts.

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