The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Feb. 21, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Yen Tseng, Tainan, TW;
Yu-Tse Kuo, Tainan, TW;
Chang-Hung Chen, Tainan, TW;
Shu-Ru Wang, Taichung, TW;
Ya-Lan Chiou, Tainan, TW;
Chun-Hsien Huang, Tainan, TW;
Chih-Wei Tsai, Hsinchu, TW;
Hsin-Chih Yu, Hsinchu County, TW;
Yi-Ting Wu, Taipei, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Jen-Yu Wang, Tainan, TW;
Jhen-Siang Wu, Kaohsiung, TW;
Po-Chun Yang, Tainan, TW;
Yung-Ching Hsieh, Tainan, TW;
Jian-Jhong Chen, Tainan, TW;
Bo-Chang Li, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A memory includes (n−1) non-volatile cells, (n−1) bit lines and a current driving circuit. Each of the (n−1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n−1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n−1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n−1) non-volatile cells.