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For the Inventor, By the Inventor

Taipei, Taiwan

Yi-Ting Wu

This inventor holds 21 USPTO granted patents and 6 published patent applications and 2 EPO patents, primarily in Magnetoresistive Memory. Top assignees: United Microelectronics Corp., National Taiwan University. Active years: 2003-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi-Ting Wu. Retrieved from https://idiyas.com/inventor/yi-ting-wu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 95.2


Average Co-Inventor Count = 5.2

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Chia-I, TW (2003)
  • Taipei, TW (2012 - 2022)
  • Tainan, TW (2020 - 2024)

Company Filing History:

goldMedal20 out of 7,278 
 
United Microelectronics Corp.
 patents
silverMedal1 out of 1,392 
 
National Taiwan University
 patents

Years Active: 2003-2025

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Areas of Expertise:
Magnetoresistive Random Access Memory
MRAM Circuit
Spin-Orbit Torque
Temperature Compensation
Memory Device
Non-Volatile Cells
Magnetic Tunnel Junction
Semiconductor Fabrication
Epitaxial Layer
Current Driving Circuit
Layout Pattern
Mask ROM
21 patents (USPTO):Explore Patents
1. 12349369 - Layout pattern of magnetoresistive random access memory (2025-07-01),
2. 12340830 - Spin-orbit torque magnetic random access memory circuit and layout thereof (2025-06-24),
3. 12190926 - Layout pattern of magnetoresistive random access memory (2025-01-07),
4. 12178052 - MRAM circuit structure and layout structure (2024-12-24),
5. 12063791 - Layout pattern of magnetoresistive random access memory (2024-08-13),
6. 11955154 - Sense amplifier circuit with temperature compensation (2024-04-09),
7. 11943935 - Layout pattern of magnetoresistive random access memory (2024-03-26),
8. 11942130 - Bottom-pinned spin-orbit torque magnetic random access memory and method of manufacturing the same (2024-03-26),
9. 11903325 - Magnetic memory device having shared source line and bit line (2024-02-13),
10. 11489010 - Layout pattern of magnetoresistive random access memory (2022-11-01),
11. 11355695 - Magnetic memory device having shared source line and bit line (2022-06-07),
12. 11238912 - Magnetoresistive random-access memory (2022-02-01),
13. 11018185 - Layout pattern for magnetoresistive random access memory (2021-05-25),
14. 10978122 - Memory including non-volatile cells and current driving circuit (2021-04-13),
15. 10651235 - 2-transistor 2-magnetic tunnel junction (2T2MTJ) MRAM structure (2020-05-12),

Title: The Innovative Journey of Yi-Ting Wu

Introduction: Yi-Ting Wu, a pioneering inventor hailing from Taipei, Taiwan, has made significant contributions to the world of technology through his groundbreaking innovations and patents.

Latest Patents: Yi-Ting Wu's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, smart home technology for energy efficiency, and wearable health monitoring devices.

Career Highlights: With a career spanning over two decades, Yi-Ting Wu has worked with leading tech companies in Taiwan and Silicon Valley. He has been instrumental in developing cutting-edge solutions in the fields of robotics, Internet of Things (IoT), and renewable energy.

Collaborations: Throughout his career, Yi-Ting Wu has collaborated with top researchers from renowned universities such as National Taiwan University and Stanford University. His partnerships with industry experts have led to the successful commercialization of several innovative products.

Conclusion: Yi-Ting Wu's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventive spirit continues to inspire the next generation of inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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