The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Jan. 11, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Yi-Ting Wu, Tainan, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Jen-Yu Wang, Tainan, TW;
Yung-Ching Hsieh, Tainan, TW;
Po-Chun Yang, Tainan, TW;
Jian-Jhong Chen, Tainan, TW;
Bo-Chang Li, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1655 (2013.01); G11C 11/161 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); H01L 27/228 (2013.01);
Abstract
In an MRAM, each unit cell includes two non-volatile storage units, three N-type transistors and three P-type transistors. Each N-type transistor is coupled in parallel with a corresponding P-type transistor for forming a transmission gate which provides bi-directional current, thereby preventing source degeneration.