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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Cheng-Tung Huang

This inventor holds 70 USPTO granted patents and 12 published patent applications and 2 EPO patents, primarily in Magnetic Memory Technology (CPC class H01L). Top assignees: United Microelectronics Corp., Ememory Technology Inc., Powerchip Semiconductor Corporation. Active years: 2000-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Tung Huang. Retrieved from https://idiyas.com/inventor/cheng-tung-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 70 

% Patents Active = 98.6

 

Average Co-Inventor Count = 5.6

ph-index = 8

Forward Citations = 224(Granted Patents)

Forward Citations (Not Self Cited) = 208(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kaoshiung, TW (2016)
  • Kao-Hsiung, TW (2000 - 2024)

Company Filing History:

goldMedal66 out of 7,278 
 
United Microelectronics Corp.
 patents
silverMedal2 out of 438 
 
Ememory Technology Inc.
 patents
bronzeMedal2 out of 269 
 
Powerchip Semiconductor Corporation
 patents

Years Active: 2000-2026

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Areas of Expertise:
Magnetoresistive Random Access Memory
MRAM Circuit
Semiconductor Device
FinFET
Transistor Structure
Temperature Compensation
Spin-Orbit Torque
Non-Volatile Cells
Epitaxial Layer
CMOS
Magnetic Tunnel Junction
70 patents (USPTO):Explore Patents
1. 12764971 - Magneto resistive random access memory circuit and layout (2026-10-13),
2. 12763758 - Ring oscillator circuit (2026-10-13),
3. 12666626 - MRAM circuit and layout (2026-06-23),
4. 12665008 - MRAM layout (2026-06-23),
5. 12586623 - Pulse signal generator system for a magnetoresistive random access memory array (2026-03-24),
6. 12567450 - MRAM circuit and layout (2026-03-03),
7. 12527049 - Transistor with fin structure and nanosheet and fabricating method of the same (2026-01-13),
8. 12178052 - MRAM circuit structure and layout structure (2024-12-24),
9. 11955154 - Sense amplifier circuit with temperature compensation (2024-04-09),
10. 11942130 - Bottom-pinned spin-orbit torque magnetic random access memory and method of manufacturing the same (2024-03-26),
11. 11903325 - Magnetic memory device having shared source line and bit line (2024-02-13),
12. 11699705 - Semiconductor device (2023-07-11),
13. 11637103 - Semiconductor device (2023-04-25),
14. 11355695 - Magnetic memory device having shared source line and bit line (2022-06-07),
15. 11238912 - Magnetoresistive random-access memory (2022-02-01),

Title: The Innovative Journey of Cheng-Tung Huang

Introduction:

Cheng-Tung Huang, a visionary inventor hailing from Kaohsiung, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Cheng-Tung Huang's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights:

Throughout his illustrious career, Cheng-Tung Huang has been recognized for his pioneering work in developing sustainable solutions for global challenges. His inventions have not only revolutionized industries but have also improved the quality of life for many around the world.

Collaborations:

Cheng-Tung Huang has collaborated with leading research institutions, universities, and multinational companies to further his research and bring his inventions to the market. His collaborative spirit and dedication to innovation have led to successful partnerships that have propelled his work to new heights.

Conclusion:

In conclusion, Cheng-Tung Huang's passion for innovation, coupled with his relentless drive to make a positive impact on society, solidifies his position as a trailblazing inventor in the world of technology. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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