The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Sep. 27, 2024
United Microelectronics Corp., Hsin-Chu City, TW;
Ting-Hao Chang, Kaohsiung City, TW;
Chien-Yu Ko, Tainan City, TW;
Cheng-Tung Huang, Kaohsiung City, TW;
Wen-Liang Huang, Taoyuan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A data writing capability enhancement system includes a magnetoresistive random access memory array, a first driving circuit, a second driving circuit, and an enhancement circuit. The first driving circuit is coupled to the magnetoresistive random access memory array and configured to provide a plurality of word line voltages to the magnetoresistive random access memory array. The second driving circuit is coupled to one side of the magnetoresistive random access memory array and configured to provide a plurality of source line voltages and a plurality of bit line voltages to the side of the magnetoresistive random access memory array. The enhancement circuit is coupled to another side of the magnetoresistive random access memory array and configured to provide a plurality of source line compensation voltages and a plurality of bit line compensation voltages to the another side of the magnetoresistive random access memory array.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile