The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Dec. 07, 2022
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A transistor with a fin structure and a nanosheet includes a fin structure. A first gate portion is disposed on the fin structure. A first source/drain layer is disposed at one side of the first gate portion. A first source/drain layer is on the fin structure and extends into the fin structure. A second source/drain layer is disposed at another side of the first gate portion. The second source/drain layer is on the fin structure and extends into the fin structure. A nanosheet is disposed above the first gate portion, between the first source/drain layer and the second source/drain layer, and contacts the first source/drain layer and the second source/drain layer. A second gate portion surrounds the nanosheet.