The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jun. 25, 2024
United Microelectronics Corp., Hsin-Chu City, TW;
Ting-Hao Chang, Kaohsiung City, TW;
Chien-Yu Ko, Tainan City, TW;
Cheng-Tung Huang, Kaohsiung City, TW;
Wen-Liang Huang, Taoyuan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A MRAM circuit is provided in the present invention, wherein each memory cell has three transistors, including a first transistor, a third transistor and a second transistor connected in order and series connection, a first node is connected between the first transistor and the third transistor, a second node is connected between the second transistor and the third transistor, and a common source line is connected with one terminal of the first transistor and the second transistor. A first MTJ set includes at least two MTJs in series connection and with one terminal connected to the first node, and a second MTJ set includes at least two MTJs in series connection and with one terminal connected to the second node.