Hsinchu County, Taiwan

Jhon-Jhy Liaw

Average Co-Inventor Count = 1.2

ph-index = 22

Forward Citations = 3,454(Granted Patents)

Forward Citations (Not Self Cited) = 2,962(Sep 21, 2024)

DiyaCoin DiyaCoin 22.61 

Inventors with similar research interests:


Location History:

  • Sang-Chong, TW (1997)
  • San Chung, TW (1999)
  • Sang Chorng, TW (1998 - 2001)
  • Taipei, TW (1996 - 2004)
  • Shin Chu, TW (2009 - 2011)
  • Sanchong, TW (2012)
  • Zhodong Township, TW (2014)
  • Jhudong Township, Hsinchu County, TW (2019 - 2022)
  • Hsin-Chu, TW (2003 - 2023)
  • Hsinchu Couny, TW (2023)
  • Zhudong Township, TW (2010 - 2024)
  • Hsinchu County, TW (2014 - 2024)
  • Zhudong Township, Hsinchu County, TW (2018 - 2024)


Years Active: 1996-2025

where 'Filed Patents' based on already Granted Patents

262 patents (USPTO):

Title: Jhon-Jhy Liaw: A Collaborative Innovator in Integrated Circuits

Introduction:

In the ever-evolving world of technology, collaboration plays a crucial role in bringing groundbreaking ideas to life. One notable innovator who has consistently fostered partnerships and brought forth remarkable contributions in the field of integrated circuits is Jhon-Jhy Liaw. Hailing from Hsinchu County, Taiwan, Liaw has made significant advancements in his field, holding an impressive number of patents and working with renowned organizations. In this article, we explore Liaw's latest patents, career highlights, and his notable collaborations.

Latest Patents:

Jhon-Jhy Liaw's passion for innovation is exemplified by his extensive collection of 234 patents. Among his recent patents, two stand out, both focusing on integrated circuits (IC).

1. IC including standard cells and SRAM cells:

This patent showcases Liaw's expertise in designing IC structures. The invention involves a layout configuration where a first line consists of multiple first cells, arranged parallel to a second line containing multiple second cells. Notably, the p-type fin field-effect transistors (FinFETs) of adjacent second cells share a discontinuous fin, while those of the first cells share a continuous fin composed of different materials.

2. Integrated circuit structure including multi-length source/drain contacts:

This patent highlights Liaw's innovation in IC structures with varying circuit architectures. The invention features three circuits, each comprising a semiconductor fin, gate electrode, and gate dielectric layer. The novel aspect lies in the different thickness of the gate dielectric layers in each circuit, facilitating unique functionalities. Additionally, the width of the third semiconductor fin is intentionally reduced compared to the second semiconductor fin.

Career Highlights:

Jhon-Jhy Liaw has made remarkable contributions throughout his career, primarily as a valuable member of the Taiwan Semiconductor Manufacturing Company Limited (TSMC). Founded in 1987, TSMC is a world-leading semiconductor company known for its cutting-edge technology and innovation.

Collaborations:

Collaboration has been an essential aspect of Jhon-Jhy Liaw's approach to innovation. Working with talented individuals and organizations has played a key role in making his ideas a reality. Notably, Liaw has collaborated closely with Jin-Yuan Lee and Chih-Hung Hsieh, both esteemed professionals in the field of integrated circuits.

Conclusion:

Jhon-Jhy Liaw's relentless pursuit of innovation has led to an impressive portfolio of patents in the field of integrated circuits. His recent inventions demonstrate his ability to push boundaries and introduce novel concepts within IC design. Through collaborations with fellow inventors and organizations like TSMC, Liaw has successfully brought his ideas into fruition, further advancing the world of technology. We eagerly anticipate the future endeavors of this collaborative innovator, who continues to shape the landscape of integrated circuits.

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