The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
May. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A memory device includes a first static random access memory (SRAM) cell, a second SRAM cell, and a first metal layer. The first SRAM cell includes first read-port pass-gate (PG) and pull-down (PD) transistors arranged in a Y-direction, and second read-port PG and PD transistors arranged in the Y-direction. The first and second read-port PD transistors share a first gate structure extending in an X-direction. The second SRAM cell includes third read-port PG and PD transistors arranged in the Y-direction, and fourth read-port PG and PD transistors arranged in the Y-direction. The third and fourth read-port PD transistors share a second gate structure extending in the X-direction. The first metal layer is over the first and second SRAM cells. The first metal layer includes first and second read bit-line conductors extending in the Y-direction and shared by the first and second SRAM cells.