The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jun. 29, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ta-Chun Lin, Hsinchu, TW;
Tien-Shao Chuang, Hsinchu, TW;
Kuang-Cheng Tai, Hsinchu, TW;
Chun-Hung Chen, Hsinchu, TW;
Chih-Hung Hsieh, Hsin-Chu, TW;
Kuo-Hua Pan, Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate including a first well region of a first conductivity type. The semiconductor device structure also includes a first fin structure and an adjacent second fin structure formed in and protruding from the first well region. The semiconductor device structure also includes a first isolation structure formed in the first well region between the first fin structure and the second fin structure. A first sidewall surface of the first fin structure faces to a second sidewall surface of the second fin structure. The first sidewall surface and the second sidewall surface each extend along at least two directions from a bottom of the first isolation structure to a top of the first isolation structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile