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Hsinchu, Taiwan

Ta-Chun Lin

USPTO Granted Patents = 51 (Patent Applications = 94)

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 21(Granted Patents)

Forward Citations (Not Self Cited) = 16(Dec 10, 2025)

Location History:

Zhubei, TW (2017)
Hsinchu, TW (2020 - 2024)

Company Filing History:

51 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Years Active: 2017-2025

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Areas of Expertise:

Hybrid Nanostructure

FinFET Device

Semiconductor Device

Parasitic Capacitance

Gate-All-Around Method

Isolation Structures

Dielectric Gates

Source/Drain Junction Depths

High Integration Density

Field-Effect Transistors

Extended Contact Structure

CMOS Image Sensors

51 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12464763 - Hybrid nanostructure and fin structure device (2025-11-04),

2. 12424520 - Semiconductor device with back-side via structure (2025-09-23),

3. 12414355 - Semiconductor device and manufacturing method thereof (2025-09-09),

4. 12414354 - Semiconductor strutures with dielectric fins (2025-09-09),

5. 12412777 - Reducing parasitic capacitance in field-effect transistors (2025-09-09),

6. 12408425 - Semiconductor structure with high integration density and method for manufacturing the same (2025-09-02),

7. 12394663 - Isolation with multi-step structure (2025-08-19),

8. 12389645 - Semiconductor structure with extended contact structure (2025-08-12),

9. 12336282 - Semiconductor device having different source/drain junction depths and fabrication method thereof (2025-06-17),

10. 12317567 - Semiconductor device structure and method for forming the same (2025-05-27),

11. 12300698 - Isolation structure for preventing unintentional merging of epitaxially grown source/drain (2025-05-13),

12. 12266653 - Semiconductor structure and methods of forming the same (2025-04-01),

13. 12205849 - Semiconductor device structure with source/drain structure and method for forming the same (2025-01-21),

14. 12183735 - Semiconductor devices and methods of manufacture (2024-12-31),

15. 12080607 - Structure and method for FinFET device with source/drain modulation (2024-09-03),

Title: The Innovative Journey of Ta-Chun Lin

Introduction: Ta-Chun Lin, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Ta-Chun Lin's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights: With a career spanning over two decades, Ta-Chun Lin has worked tirelessly to push the boundaries of technological innovation. His work has led to the creation of several patented inventions that have revolutionized the industry.

Collaborations: Throughout his career, Ta-Chun Lin has collaborated with leading tech companies and research institutions to further his research and bring his inventions to life. His collaborative efforts have resulted in the successful commercialization of several groundbreaking technologies.

Conclusion: Ta-Chun Lin's passion for innovation and his relentless pursuit of technological advancement have solidified his position as a trailblazer in the world of inventors. His contributions have not only shaped the industry but have also paved the way for future generations of innovators to follow in his footsteps.

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