The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Aug. 30, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ta-Chun Lin, Hsinchu, TW;

Chih-Pin Tsao, Hsinchu County, TW;

Chih-Hao Chang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01);
U.S. Cl.
CPC ...
H10D 62/102 (2025.01); H10D 30/0227 (2025.01); H10D 30/6211 (2025.01); H10D 64/021 (2025.01); H10D 64/027 (2025.01); H10D 84/014 (2025.01); H10D 84/0142 (2025.01);
Abstract

Semiconductor devices and methods of forming the same are provided. A semiconductor structure includes a substrate, a first active region, a second active region and a third active region over the substrate, a first gate structure over a channel region of the first active region, a second gate structure over a channel region of the second active region, a third gate structure over a channel region of the third active region, a first cap layer over the first gate structure, a second cap layer over the second gate structure, and a third cap layer over the third gate structure. A height of the second gate structure is smaller than a height of the first gate structure or a height of the third gate structure.


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