The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Aug. 12, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ta-Chun Lin, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu City, TW;
Chih-Hao Chang, Hsin-chu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a gate structure formed over a substrate, and a first source/drain (S/D) structure formed adjacent to the gate structure. The semiconductor structure includes an S/D contact structure formed over the first S/D structure, and a dielectric wall formed below the gate structure and the S/D contact structure. The dielectric wall has a first portion directly below the S/D contact structure and a second portion directly below the gate structure, the first portion has a first height along a vertical direction, the second portion has a second height along the vertical direction, and the first height is smaller than the second height.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile