The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Jun. 29, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory structure includes a static random access memory (SRAM) cell having a first pass-gate transistor and a second pass-gate transistor, a word-line conductor extending in a first direction, a first source/drain contact, a second source/drain contact, a bit-line conductor in a second direction, and a bit-line-bar conductor extending in the second direction. The second direction is perpendicular to the first direction. The word-line conductor is over and electrically connected to gate electrodes of the first pass-gate transistor and the second pass-gate transistor. The first source/drain contact is under and electrically connected to a source/drain feature of the first pass-gate transistor. The second source/drain contact is under and electrically connected to a source/drain feature of the second pass-gate transistor. The bit-line conductor is under and electrically connected to the first source/drain contact. The bit-line conductor is under and electrically connected to the second source/drain contact.