The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Aug. 19, 2024
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Ting-Hao Chang, Kaohsiung City, TW;

Chien-Yu Ko, Tainan City, TW;

Cheng-Tung Huang, Kaohsiung City, TW;

Wen-Liang Huang, Taoyuan City, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); G11C 11/16 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); G11C 11/161 (2013.01);
Abstract

A MRAM circuit is provided in the present invention, wherein each memory cell includes a first transistor with a first gate, a first source and a first drain and the first gate is connected to a first word line, a second transistor with a second gate, a second source and a second drain and the second gate is connected to a second word line, and the second source and the second drain are connected respectively with the first source and the first drain, a first MTJ with one terminal connected to the first drain and the second drain and another terminal connected to a first bit line, and a second MTJ with one terminal connected to the first drain and the second drain and another terminal connected to a second bit line, and a source line connected to the first source and the second source.


Find Patent Forward Citations

Chang, Ting-Hao. (2026). Mram circuit and layout (U.S. Patent No. 12666626). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666626

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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