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Hsin-Chu, Taiwan

Ememory Technology Inc.

USPTO Granted Patents = 418

EPO Patents = 73

Trademarks = 7

Forward Citations = 2,540

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169 inventors (with patents filed for the assignee):

Hsin-Ming Chen (56 out of 74 patents)

Ching-Hsiang Hsu (56 out of 123 patents)

Ching-Sung Yang (45 out of 67 patents)

4. Wein-Town Sun (42 out of 89 patents)

5. Shih-Chen Wang (37 out of 37 patents)

6. Wei-Ren Chen (34 out of 34 patents)

7. Shih-Jye Shen (34 out of 35 patents)

8. Meng-Yi Wu (27 out of 42 patents)

9. Wen-Hao Ching (27 out of 27 patents)

10. Tsung-Mu Lai (22 out of 22 patents)

11. Chia-Fu Chang (19 out of 19 patents)

12. Ching-Yuan Lin (18 out of 18 patents)

13. Wei-Ming Ku (17 out of 17 patents)

14. Chia-Jung Hsu (17 out of 21 patents)

15. Chen-Hao Po (16 out of 17 patents)

Core Competencies:

Non-Volatile Memory

Antifuse Memory

Charge-Trapping Memory

Physically Unclonable Function

Memory Cell Array

Voltage Level Shifter

Resistive Random-Access Memory

Sense Amplifier

Programming Method

Electrostatic Discharge Circuit

Magnetoresistive Random Access Memory

Short Channel Effect

418 patents: Sort by Forward Citations

1. 12512165 - Sensing apparatus for non-volatile memory (2025-12-30),

2. 12501620 - Memory cell of charge-trapping non-volatile memory (2025-12-16),

3. 12482526 - Non-volatile memory and reference current generator thereof (2025-11-25),

4. 12477739 - Manufacturing method for nonvolatile charge-trapping memory apparatus (2025-11-18),

5. 12477724 - Antifuse-type one time programming memory cell with gate-all-around transistor (2025-11-18),

6. 12475936 - Sense amplifier applied to non-volatile memory (2025-11-18),

7. 12414293 - Antifuse-type one time programming memory with forksheet transistors (2025-09-09),

8. 12413230 - Level shifting circuit (2025-09-09),

9. 12412850 - One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method (2025-09-09),

10. 12400716 - Memory cell and array structure of non-volatile memory and associated control method (2025-08-26),

11. 12394499 - Antifuse-type non-volatile memory and control method thereof (2025-08-19),

12. 12394479 - PMOS voltage selection circuit with an auxiliary selection circuit to prevent a floating output (2025-08-19),

13. 12387804 - Anti-fuse memory device (2025-08-12),

14. 12376294 - Electrostatic discharge circuit (2025-07-29),

15. 12354700 - Memory device and operation method thereof (2025-07-08),

eMemory Technology Inc. is a leading provider of embedded non-volatile memory (eNVM) intellectual property (IP). With innovative technologies like NeoBit, NeoFuse, NeoMTP and NeoFlash, eMemory enables a wide range of applications including consumer electronics, automotive, microcontrollers, secure ICs, IoT and more. Their solutions help customers enhance product performance, reduce costs, and improve time-to-market. Visit their website for more information.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

418 Patents

#7 in Hsin-Chu

#65 in Taiwan

#2,190 in the World

Hsin-Chu, Taiwan

Ememory Technology Inc.

Forward Citations = 2,540

169 inventors:

Hsin-Ming Chen (56 out of 74 patents)

Ching-Hsiang Hsu (56 out of 123 patents)

Ching-Sung Yang (45 out of 67 patents)

4. Wein-Town Sun (42 out of 89 patents)

5. Shih-Chen Wang (37 out of 37 patents)

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