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Hsinchu, Taiwan

Ememory Technology Inc.

USPTO Granted Patents = 438

% Expired Patents = 6.8

EPO Patents = 73

Trademarks = 4

Forward Citations = 2,614

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170 inventors (with patents filed for the assignee):

Hsin-Ming Chen (56 out of 74 patents)

Ching-Hsiang Hsu (56 out of 123 patents)

Ching-Sung Yang (45 out of 67 patents)

4. Wein-Town Sun (43 out of 90 patents)

5. Shih-Chen Wang (38 out of 38 patents)

6. Wei-Ren Chen (35 out of 35 patents)

7. Shih-Jye Shen (34 out of 35 patents)

8. Meng-Yi Wu (27 out of 42 patents)

9. Wen-Hao Ching (27 out of 27 patents)

10. Tsung-Mu Lai (25 out of 25 patents)

11. Chia-Fu Chang (19 out of 19 patents)

12. Chia-Jung Hsu (19 out of 23 patents)

13. Ching-Yuan Lin (19 out of 19 patents)

14. Wei-Ming Ku (18 out of 18 patents)

15. Chih-Hsin Chen (16 out of 17 patents)

Core Competencies:

Non-Volatile Memory

Programming Method

Sensing Circuit

Charge-Trapping

Erasable Memory

Memory Cell Array

Voltage Level Shifter

Fault Injection Protection

Random Code Generator

Resistive Memory

Electrostatic Discharge

Multiply Accumulate Circuit

438 patents: Sort by Forward Citations

1. 12764952 - Layout structure of memory cell array for non-volatile memory (2026-10-13),

2. 12761676 - Erasable programmable non-volatile memory cell (2026-10-13),

3. 12740112 - One time programming memory including forksheet transistors and using physically unclonable function technology (2026-09-15),

4. 12740056 - One time programming memory cell with gate-all-around transistor for physically unclonable function technology (2026-09-15),

5. 12738320 - Charge pump circuit and charge pump device (2026-09-15),

6. 12720738 - Voltage level shifter (2026-08-25),

7. 12676196 - Level shifter (2026-07-07),

8. 12648136 - Power supplying circuit and associated switch controller for non-volatile memory (2026-06-02),

9. 12641786 - Memory device and method for controlling verification voltage of memory device (2026-05-26),

10. 12635132 - Antifuse-type non-volatile memory cell (2026-05-19),

11. 12627288 - Voltage selector (2026-05-12),

12. 12626770 - Control gate voltage generating circuit for non-volatile memory (2026-05-12),

13. 12615768 - One-time-programmable memory device (2026-04-28),

14. 12608508 - Fault-injection protection circuit for protecting against laser fault injection (2026-04-21),

15. 12591508 - Non-volatile memory and associated control method (2026-03-31),

Company Overview

Ememory Technology Inc., based in Hsinchu, Taiwan, specializes in the development of advanced non-volatile memory solutions. The company focuses on innovative technologies such as charge-trapping memory, programming methods, and sensing circuits, which are essential for enhancing memory performance and reliability. Ememory's expertise extends to erasable memory and memory cell arrays, contributing to the evolution of memory technologies in various applications, including consumer electronics and industrial systems.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

438 Patents

#21 in Hsinchu

#70 in Taiwan

#2,168 in the World

Hsinchu, Taiwan

Ememory Technology Inc.

Forward Citations = 2,614

170 inventors:

Hsin-Ming Chen (56 out of 74 patents)

Ching-Hsiang Hsu (56 out of 123 patents)

Ching-Sung Yang (45 out of 67 patents)

4. Wein-Town Sun (43 out of 90 patents)

5. Shih-Chen Wang (38 out of 38 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Ememory Technology Inc.. Retrieved from https://idiyas.com/company/ememory-technology

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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