The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
May. 10, 2024
Ememory Technology Inc., Hsin-Chu, TW;
Lun-Chun Chen, Hsinchu County, TW;
Ping-Lung Ho, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
An OTP memory using a PUF technology includes a first memory cell. The first memory cell includes an antifuse transistor, a first select transistor and a second select transistor. The antifuse transistor includes a first nanowire, a second nanowire, a first gate structure, a first drain/source structure and a second drain/source structure. The first portions of the first nanowire and the second nanowire are contacted with the isolation wall. The second portions of the first nanowire and the second nanowire are covered by the first gate structure. The first drain/source structure is electrically connected with the first terminals of the first nanowire and the second nanowire. The second drain/source structure is electrically connected with a second terminal of the second nanowire, but not electrically connected with a second terminal of the first nanowire.