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For the Inventor, By the Inventor

Hsinchu County, Taiwan

Tsung-Mu Lai

USPTO Granted Patents = 21 

 

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Hsinchu County, TN (US) (2016)
  • Hsinchu County, TW (2011 - 2024)

Company Filing History:

goldMedal21 out of 416 
 
Ememory Technology Inc.
 patents

Years Active: 2011-2025

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21 patents (USPTO):
1. 12477739 - Manufacturing method for nonvolatile charge-trapping memory apparatus (2025-11-18),
2. 12069873 - Resistive memory cell and associated cell array structure (2024-08-20),
3. 12063774 - Forming control method applied to resistive random-access memory cell array (2024-08-13),
4. 11980026 - Magnetoresistive random access memory for physically unclonable function technology and associated random code generating method (2024-05-07),
5. 11929434 - High voltage switch device (2024-03-12),
6. 11663455 - Resistive random-access memory cell and associated cell array structure (2023-05-30),
7. 11416416 - Random code generator with non-volatile memory (2022-08-16),
8. 11398259 - Memory cell array of multi-time programmable non-volatile memory (2022-07-26),
9. 11335805 - High voltage switch device (2022-05-17),
10. 11063772 - Multi-cell per bit nonvolatile memory unit (2021-07-13),
11. 11062773 - Near-memory computation system for analog computing (2021-07-13),
12. 10991430 - Non-volatile memory cell compliant to a near memory computation system (2021-04-27),
13. 10910062 - Random bit cell with nonvolatile memory cell (2021-02-02),
14. 10255980 - Memory array with one shared deep doped region (2019-04-09),
15. 9941011 - Memory array with one shared deep doped region (2018-04-10),

Title: Innovator Profile: Tsung-Mu Lai - Pioneering Inventor in Hsinchu County, TW

Introduction: Tsung-Mu Lai, a distinguished innovator based in Hsinchu County, TW, has solidified his reputation in the field of technology with an impressive portfolio of 20 patents. His groundbreaking work in resistive memory cell technologies has significantly contributed to the advancement of the industry.

Latest Patents:

1. Resistive Memory Cell and Associated Cell Array Structure: Tsung-Mu Lai's latest patent showcases a cutting-edge cell array structure that incorporates a first resistive memory cell. This innovative design includes multiple key components such as well regions, doped regions, gate structures, and metal layers, revolutionizing the landscape of resistive memory technologies.

2. Forming Control Method Applied to Resistive Random-Access Memory Cell Array: In another groundbreaking patent, Tsung-Mu Lai introduces a novel forming control method for resistive random-access memory cell arrays. By implementing a verification action during the forming process, this method ensures the successful completion of forming actions on all memory cells, optimizing performance and reliability.

Career Highlights: Tsung-Mu Lai is a key member of Ememory Technology Inc., a leading technology firm known for its innovative contributions to the semiconductor industry. His extensive expertise and inventive prowess have been instrumental in driving the company's success and establishing its position as a trailblazer in the field.

Collaborations: Tsung-Mu Lai has had the privilege of collaborating with esteemed colleagues such as Chih-Hsin Chen and Shih-Chen Wang. Together, they have synergized their talents and expertise to push the boundaries of technology and bring forth cutting-edge solutions to complex challenges.

Conclusion: Tsung-Mu Lai's exceptional ingenuity and relentless pursuit of innovation have solidified his standing as a prominent figure in the realm of technology. His groundbreaking patents, collaborative endeavors, and contributions to Ememory Technology Inc. underscore his pivotal role in shaping the future of the industry.

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