The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Apr. 15, 2022
Ememory Technology Inc., Hsin-Chu, TW;
Chih-Hsin Chen, Hsinchu County, TW;
Shih-Chen Wang, Hsinchu County, TW;
Tsung-Mu Lai, Hsinchu County, TW;
Wen-Hao Ching, Hsinchu County, TW;
Chun-Yuan Lo, Hsinchu County, TW;
Wei-Chen Chang, Hsinchu County, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.