The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Mar. 10, 2023
Ememory Technology Inc., Hsin-Chu, TW;
Chun-Hsiao Li, Hsinchu County, TW;
Tsung-Mu Lai, Hsinchu County, TW;
Cheng-Yen Shen, Hsinchu County, TW;
Chia-Jung Hsu, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
A manufacturing method for a nonvolatile charge-trapping memory apparatus is provided. During the manufacturing process of the nonvolatile memory apparatus, a blocking layer of a storage device is effectively protected. Consequently, the blocking layer is not contaminated or thinned. Moreover, since the well regions of the logic device area and the memory device area are not simultaneously fabricated, it is feasible to fabricate small-sized nonvolatile memory cell in the memory device area and precisely control the threshold voltage of the charge trapping transistor.