Taoyuan, Taiwan

Cheng-Yen Shen

This inventor holds 5 USPTO granted patents and 5 published patent applications. Top assignee: Ememory Technology Inc.. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Yen Shen. Retrieved from https://idiyas.com/inventor/cheng-yen-shen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Tainan, TW (2010)
  • Taoyuan County, TW (2014)

Company Filing History:


Years Active: 2010-2026

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5 patents (USPTO):Explore Patents

Title: Cheng-Yen Shen: Innovator in Non-Volatile Memory Technology

Introduction

Cheng-Yen Shen is a prominent inventor based in Taoyuan County, Taiwan. He has made significant contributions to the field of non-volatile memory technology, holding a total of 5 patents. His innovative work focuses on enhancing the efficiency and reliability of memory cells.

Latest Patents

One of his latest patents is titled "Memory cell of charge-trapping non-volatile memory." This invention provides a memory cell formed on a well region of a semiconductor substrate, which includes a storage transistor. The gate structure of the storage transistor consists of multiple layers, including a first tunneling layer, a second tunneling layer, a trapping layer, a blocking layer, and a gate layer. Notably, the second tunneling layer features a gradient nitrogen distribution, which optimizes the performance of the memory cell.

Another significant patent is the "Manufacturing method for nonvolatile charge-trapping memory apparatus." This method ensures that the blocking layer of a storage device is effectively protected during the manufacturing process. As a result, the blocking layer remains uncontaminated and maintains its integrity. This innovation allows for the precise fabrication of small-sized nonvolatile memory cells and the accurate control of the threshold voltage of the charge trapping transistor.

Career Highlights

Cheng-Yen Shen is currently employed at Ememory Technology Inc., where he continues to develop cutting-edge memory technologies. His work has positioned him as a key figure in the advancement of non-volatile memory solutions.

Collaborations

He collaborates with talented coworkers, including Chun-Hsiao Li and Tsung-Mu Lai, who contribute to the innovative projects at Ememory Technology Inc.

Conclusion

Cheng-Yen Shen's contributions to non-volatile memory technology demonstrate his commitment to innovation and excellence in the field. His patents reflect a deep understanding of semiconductor technology and its applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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