The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Mar. 27, 2008
Hsin-ming Chen, Tainan County, TW;
Shih-chen Wang, Taipei, TW;
Sheng-yu Wang, Hsinchu, TW;
Cheng-yen Shen, Tainan, TW;
Hsin-Ming Chen, Tainan County, TW;
Shih-Chen Wang, Taipei, TW;
Sheng-Yu Wang, Hsinchu, TW;
Cheng-Yen Shen, Tainan, TW;
eMemory Technology Inc., Hsin-chu, TW;
Abstract
A present invention relates to a method of erasing a P-channel non-volatile memory is provided. This P-channel non-volatile memory includes a select transistor and a memory cell connected in series and disposed on a substrate. In the method of erasing the P-channel non-volatile memory, holes are injected into a charge storage structure by substrate hole injection effect. Hence, the applied operational voltage is low, so the power consumption is lowered, and the efficiency of erasing is enhanced. As a result, an operational speed of the memory is accelerated, and the reliability of the memory is improved.