The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Aug. 31, 2021
Ememory Technology Inc., Hsin-Chu, TW;
Tsung-Mu Lai, Hsinchu County, TW;
Wei-Chen Chang, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
A cell array structure includes a first resistive memory cell. The first resistive memory cell includes a well region, a first doped region, a merged region, a first gate structure, a second gate structure and a first metal layer. The first doped region is formed under a surface of the well region. The merged region is formed under the surface of the well region. The first gate structure is formed over the surface of the well region between the first doped region and the merged region. The first gate structure includes a first insulation layer and a first conductive layer. The second gate structure is formed over the merged region. The second gate structure includes a second insulation layer and a second conductive layer. The first metal layer is connected with the first doped region.